Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

In this study nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated Al nanoparticles were embedded in between SiO2 tunneling and control oxide layers deposited on ZnO channels and these nanoparticles acted as floating gate nodes in the devices Their electron mobility on/off ratio and threshold voltage shift were estimated to be 9 42 cm(2)/V s about 10(6) and 4 2 V respectively Their programming/erasing endurance and retention were also characterized Especially the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates (C) 2010 Elsevier Masson SAS All rights reserved