Journal
SOLID STATE COMMUNICATIONS
Volume 155, Issue -, Pages 6-11Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.10.044
Keywords
Silicene and germanene; Electronic structure; Strain effect; First-principles calculation
Categories
Funding
- NSFC [11104052, 11104249]
- State Key Laboratory of Low-Dimensional Quantum Physics [20120906]
- HZNU College of Science HPC Center
- Beijing Computing Center
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By first-principles calculations, the variations of band structures by strains are investigated for silicene and germanene nanosheets, i.e. the Si and Ge analogs of graphene. It is found that both systems exhibit a strain-induced self-doping phenomenon, which is closely related with their buckled structures and cannot arise in graphene. Under the compressive strain, the Dirac point is moved below the Fermi level, making the nanosheets behave as n-type doped. While under the tensile strain, the p-type doping is rendered by shifting the Dirac point above the Fermi level. Our studies demonstrate that the n-type/zero-band-gap/p-type semiconducting features can be switched for silicene and germanene by applying strains. (C) 2012 Elsevier Ltd. All rights reserved.
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