4.4 Article

Crystal structures and band gap characters of h-BN polytypes predicted by the dispersion corrected DFT and GW method

Journal

SOLID STATE COMMUNICATIONS
Volume 152, Issue 19, Pages 1817-1820

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.07.022

Keywords

Boron nitride; Band gap; DFT; GW method

Funding

  1. National Natural Science Foundation of China [10804018]
  2. State Key Development Program of Basic Research of China [2011CB606403]

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Geometry optimizations are performed for three polytypes of h-BN using density functional theory with dispersion correction for the van der Walls interaction. Quasiparticle band structure calculations are carried out to solve the controversy on band gap type of h-BN. Band energies are corrected by GW method. The h-BN with Bk structure has an indirect band gap of 5.840 eV. Two kinds of h-BN polytypes are shown to be mechanically stable and have quasi-direct band gap type. (C) 2012 Elsevier Ltd. All rights reserved.

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