Journal
SOLID STATE COMMUNICATIONS
Volume 152, Issue 14, Pages 1208-1211Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.04.062
Keywords
Semiconductors; Doping; Electronic transport; Thermoelectric
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Funding
- US Air Force Office of Scientific Research MURI program [FA9550-10-1-0533]
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Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi2-xSbxTeSe2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies. (C) 2012 Elsevier Ltd. All rights reserved.
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