Journal
SOLID STATE COMMUNICATIONS
Volume 152, Issue 15, Pages 1311-1316Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.04.042
Keywords
Graphene; Contact resistance; Mobility
Categories
Funding
- SRC NRI SWAN center
- Texas Emerging Technology Fund
- Texas Instruments diversity CMOS fellowship
- NSF MRSEC: The Georgia Tech Laboratory for New Electronic Materials [0820382]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820382] Funding Source: National Science Foundation
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The transport properties of graphene field effect transistors are typically characterized using a conventional test structure consisting of graphene on silicon dioxide with deposited metal contacts. Two of the primary parameters affecting the total resistance of this structure are the channel mobility and contact resistance. A simple model is used to describe the impact of these parameters on total device resistance and experimentally extract them. Important issues related to characterizing the transport properties of graphene field effect transistors are presented and discussed. (C) 2012 Elsevier Ltd. All rights reserved.
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