Journal
SOLID STATE COMMUNICATIONS
Volume 151, Issue 18, Pages 1248-1251Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.05.049
Keywords
Magnetic films and multilayers; Thin film; Electronic transport
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Funding
- WCU (World Class University) through the National Research Foundation of Korea
- Ministry of Education, Science and Technology [R32-20026]
- National Research Foundation of Korea [R32-2011-000-20026-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5 m Omega/Oe, and its value monotonously increased to 102.6 m Omega/Oe for 17 rings with an enhanced active area. (C) 2011 Elsevier Ltd. All rights reserved.
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