4.4 Article

Engineering and metrology of epitaxial graphene

Journal

SOLID STATE COMMUNICATIONS
Volume 151, Issue 16, Pages 1094-1099

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.05.020

Keywords

Graphene; Quantum Hall effect; Photochemical gate; Metrology

Funding

  1. Engineering and Physical Sciences Research Council [EP/I500510/1] Funding Source: researchfish
  2. EPSRC [EP/I500510/1] Funding Source: UKRI

Ask authors/readers for more resources

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available