Journal
SOLID STATE COMMUNICATIONS
Volume 151, Issue 22, Pages 1641-1644Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.08.017
Keywords
Semiconductors; Surfaces and interfaces; Electronic transport
Categories
Funding
- National Science Foundation (DMR)
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A comprehensible and systematic method to modify the Schottky barrier height (SBH), based on the adjustment of the semiconductor electron affinity through adsorbate termination, is demonstrated. Atomic layers of As and Cl, inserted at the metal-Si(111) interface and preferentially bonded to Si, are shown to shift the SBH by as much as 0.40 eV. The (partial) preservation of surface dipole at the metal-semiconductor (MS) interface is likely attributable to the chemical stability of adsorbate-terminated semiconductor surfaces. Experimental and theoretical results are presented to demonstrate the validity of the concept and the effectiveness of SBH adjustment through such partisan interlayers. The general implications of these results for the theoretical understanding and the practical control of the SBH are also discussed. (C) 2011 Elsevier Ltd. All rights reserved.
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