Journal
SOLID STATE COMMUNICATIONS
Volume 150, Issue 41-42, Pages 1987-1990Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2010.08.020
Keywords
Graphene; Phase coherence; Weak localization; Magnetoresistance
Categories
Funding
- Korean Government [2010-0016005]
- National Research Council of Science & Technology (NST), Republic of Korea [2E21670] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0072022] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (tau(phi)), intervalley scattering time (tau(i)), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of tau(phi) shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, tau(phi) increases rapidly as the density of carrier increases. However, tau(i) shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of tau(phi). (c) 2010 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available