Journal
SOLID STATE COMMUNICATIONS
Volume 150, Issue 41-42, Pages 2036-2039Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2010.08.010
Keywords
Semiconductor; Thin films; Pulsed laser deposition
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Funding
- Natural Science Foundation of Anhui Province [070414157]
- Presidential Foundation of Hefei Institute of Physical Science
- Director Foundation of the Technical Center for Applied Laser
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The fundamental properties of CdFe2O4 semiconductor thin film have been investigated. CdFe2O4 polycrystalline powder was synthesized by a co-precipitation-calcination process, and its thin film was prepared on a glass substrate by the pulsed laser deposition (PLD) method. The transmittance and reflectance spectra of the thin film indicate that the compound is an indirect bandgap material with E-g = 1.97 eV. Its absorption coefficients are larger than 10(4) cm(-1) when the wavelength is shorter than 700 nm. The electrical conductivity of the CdFe2O4 thin film was measured at different temperatures, its conductivity activation energy is about 71.9 meV. The relationship between CdFe2O4 semiconductor properties and its microstructure was discussed. (c) 2010 Elsevier Ltd. All rights reserved.
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