Journal
SOLID STATE COMMUNICATIONS
Volume 149, Issue 41-42, Pages 1826-1830Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.07.006
Keywords
Organic crystal; Thin film; Impurities in semiconductors
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Funding
- Natural Science Foundation of China [60477014, 60577041, 60777018, 60776040]
- 863 project [2008AA03A336]
- Shanghai Leading Academic Disciplines [S30107]
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Organic thin film transistors (OTFTs) with different concentrations of tetrafluorotetracyanoquinodimethane (F(4)-TCNQ) doped pentacene interlayer were fabricated. When a 2 wt% F4-TCNQ doped pentacene layer was incorporated between gold electrodes and a pentacene layer, the performance of the OTFT was significantly improved. The saturation mobility increased from 0.21 to 0.63 cm(2)/Vs, the threshold voltage was reduced from -31.9 to -7.6 V, and the threshold swing varied from 5.09 to 2.40 V/dec as compared with an OTFT without interlayer. This improvement was ascribed to the reduction of the hole-injection barrier and contact resistance. Our results indicated that contact-area-limited doping is an effective way to improve OTFT performance. (C) 2009 Elsevier Ltd. All rights reserved.
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