Journal
SOLID STATE COMMUNICATIONS
Volume 149, Issue 45-46, Pages 2021-2023Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.08.030
Keywords
Semiconductors; MOCVD; Metal-semiconductor-metal; Fast response
Categories
Funding
- National Natural Science Foundation of China [50532050]
- 973 Program [2006CB604906, 2008CB317105]
- Chinese Academy of Sciences [KJCX3.SYW.W01]
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A Mg0.48Zn0.52O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase with high crystal quality from X-ray diffraction measurements. A metal-semiconductor-metal (MSM) structured photodetector was fabricated on the film. The device exhibits a peak response of 268 nm with a cutoff wavelength at 283 nm. Rise and decay times of 10 ns and 150 ns, respectively, are obtained with a load resistance of 50 Omega. The pulse response for the device is limited by the RC time constant. (C) 2009 Elsevier Ltd. All rights reserved.
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