Journal
SOLID STATE COMMUNICATIONS
Volume 149, Issue 25-26, Pages 1004-1007Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.04.008
Keywords
InN; Surface charge accumulation layer; Spin-dependent current; Spin splitting
Categories
Funding
- Special Funds for Major State Basic Research [2006CB604905]
- National Nature Science Foundation of China [60721063, 60820106003, 60731160628, 60776001]
- Research Fund for the Doctoral Program of Higher Education of China [20050284004]
- 973 projects [2006CB604908, 2006CB921607]
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A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
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