Journal
SOLID STATE COMMUNICATIONS
Volume 148, Issue 5-6, Pages 234-236Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2008.08.012
Keywords
Semiconductors; Optical properties; Luminescence
Categories
Funding
- National Science Foundation of China [10774037]
- Natural Science Foundation of Hebei Province [E2007000280]
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GaMnN powders with varying Mn concentrations (0-7 at. %) were prepared by the Sol-Gel method. All samples are found to have a hexagonal wurtzite structure without any secondary phases. Photoluminescence spectra show a redshift in the peak position of the UV PL with increasing Mn doping which is consistent with the band gap narrowing. X-ray photoelectron spectroscopy (XPS) measurements show that the doped Mn ion in (Ga, Mn)N powders is in the divalent state. Magnetism measurements revealed that all samples are paramagnetic at 5 K and that the Curie-Weiss temperature is negative. (C) 2008 Elsevier Ltd. All rights reserved.
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