Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 187, Issue -, Pages 170-175Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2018.08.006
Keywords
Sb2Se3 thin-film solar cell; Post annealing treatment; Admittance spectroscopy; Conversion efficiency
Funding
- National Natural Science Foundation of China [61604055]
- National Science Foundation of China [61704057]
- Recruitment Program of Global Experts (1000 Talent Plan) of China
- China Postdoctoral Science Foundation [2016M601543, 2018T110374]
- Shanghai Pujiang Program in China [16PJ1402600]
Ask authors/readers for more resources
Sb2Se3 thin films prepared by vapor transport deposition (VTD) method have been treated by post annealing process at 200 degrees C in vacuum condition for 1 h, and the comparative studies between the post annealing treatment (PAT) and without the treatment were carried out. The device efficiency was improved from 4.89% to 5.72% by PAT via the augment of open-circuit voltage and fill factor. Electrical properties from dark J-V and C-V measurements, structural properties from X-ray diffraction, Raman and scanning electron microscope measurements, defect properties from admittance measurements have been compared for the two cell samples. The Sb2Se3 cell sample with PAT was found to own less parallel current pathways, larger built-in voltage, better crystalline and lower defects densities, which may account for the efficiency enhancement.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available