4.7 Article

The influence of defects on the cellular open circuit voltage in CuInGaSe2 thin film solar modules-An illuminated lock-in thermography study

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 123, Issue -, Pages 159-165

Publisher

ELSEVIER
DOI: 10.1016/j.solmat.2014.01.014

Keywords

ILIT; Cell voltage; Open circuit; V-oc; Defect; Lock-in thermography

Funding

  1. Federal Ministry for Environment, Nature Conservation, and Nuclear Safety (BMU) of Germany [FKZ 0325149A]

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CuInGaSe2 (CIGS) thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. This occurs due to film's sensitivity to inhomogeneities during the manufacturing process. The result is a decrease of electrical power output from a cell or module. In this paper, we present the influence of macroscopic defects on the electrical behavior of CIGS thin film solar cells. To accomplish this, we investigated the relation between the IR-signal emitted of a defect in a cell (measured using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (V-oc,V-cell) under low light conditions ( < 100 W/m(2)). Furthermore, we developed a modified masking method of measuring V-oc,V-cell of a single cell within a thin film solar module. (C) 2014 Elsevier B.V. All rights reserved.

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