Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 129, Issue -, Pages 95-103Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2014.04.018
Keywords
Chalcopyrite Cu(In,Ga)Se-2; Hydrogenated microcrystalline silicon (mu c-Si:H); Hydrogenated amorphous silicon (a-Si:H); Thin film solar cell; Electroluminescence (EL); Quantum efficiency
Funding
- Imperial College
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We present the electroluminescence and quantum efficiency of three different types of thin-film solar cells based on absorbers made from Cu(In,Ga)Se-2 as well as from mu c-Si:H and a-Si:H. Simulations of our experimental results show that the main contribution to the electroluminescence spectrum originates from band-to-tail transitions in the case of Cu(In,Ga)Se-2, from tail-to-tail transitions in mu c-Si:H, and from tail-to-tail as well as from band-to-midgap-defect transitions in a-Si:H. By comparing the electroluminescence with the quantum efficiency, we analyze the effect of localized states on the optoelectronic reciprocity relation in the three material systems. The relatively steep band-tail density of states in Cu(In,Ga)Se-2 is compatible with the reciprocity relation at room temperature while the shallower band-tail density of states in mu c-Si:H and the deep mid-gap defect states in a-Si:H lead to substantial deviations from the reciprocity. (C) 2014 Elsevier B.V. All rights reserved.
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