Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 122, Issue -, Pages 282-286Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2013.12.014
Keywords
Transparent conducting oxides; Al-doped ZnO; Damp-heat test; Photovoltaics
Funding
- National Research Foundation of Korea (NRF) [2013R1A1A2065793, 2010-0029065]
- National Research Foundation of Korea [2013R1A1A2065793] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A complete understanding of the reliability for ZnO-based transparent conducting oxides is essential for actual applications in photovoltaic devices or displays requiring long-term stability. The stability and degradation mechanisms under a controlled damp-heat environment (humid and hot atmosphere) for sputter-deposited aluminum-doped zinc oxide (ZnO:Al) thin films were quantitatively studied. The continuous degradations of carrier concentration and mobility with the Fermi-level shift were observed, and this behavior was resolved by separating the changes in the carrier-transport characteristics of the intragrain and grain boundary. By correlating the temperature dependence of electrical characteristics with x-ray photoelectron spectroscopy, the degradation is well explained by the increase of chemisorbed OH- in the grain boundaries. (C) 2013 Elsevier B.V. All rights reserved.
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