Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 117, Issue -, Pages 526-530Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2013.07.026
Keywords
Cu(InGa)Se-2; ZnS(O, OH); Chemical bath deposition; Heat light-soaking
Funding
- NEDO as a Development of Next-generation High-Performance Technology for Photovoltaic Power Generation System project
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The influence of the buffer layer thickness and the thiourea concentration in chemical bath on the cell performance of ZnS(O,OH)/CIGS solar cells was investigated. It was found that a high efficiency CIGS solar cell could be achieved by increasing the thiourea concentration in the chemical bath deposition (CBD) solution even if a very thin ZnS(O,OH) buffer layer (10 nm) was used. As a result, the CBD deposition time could be shortened to one six as compared to that of thicker buffer layer thickness of 120 nm. The results are discussed in connection with the conduction band offset at the ZnS(O,OH)/CIGS interface. (C) 2013 Elsevier B.V. All rights reserved.
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