Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 98, Issue -, Pages 491-493Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2011.11.026
Keywords
Organic photovoltaics; Bulk-heterojunction; ZnO; Hole blocking layer; Inflection point; Shunting effect
Funding
- European Commission [261936]
- Danish Strategic Research Council [2104-07-0022]
- EUDP [64009-0050]
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We present a simple post-processing treatment, which dramatically improves the electrical properties of inverted geometry bulk-heterojunction organic solar cells, by enhancing functionality of the zinc-oxide hole blocking layer. The results show that inherent problems associated with the ZnO layer (e.g. shunting and J-V inflection points) are of the same origin and can be efficiently treated and removed. (C) 2011 Elsevier BM. All rights reserved.
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