Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 102, Issue -, Pages 15-18Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2011.12.015
Keywords
Sensitized solar cell; Type II heterostructure; ZnOanSe nanowire array; High bandgap semiconductors; Low effective bandgap; Time resolved PL
Funding
- Charlotte Research Institute
- National Natural Science Foundations of China [60827004, 61106008]
- Natural Science Foundations of Fujian Province [2010J01343]
- fundamental research funds for the central universities [2011121042]
- Fondation Nanosciences (France)
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We report the realization of a prototype solar cell based on a ZnO/ZnSe core/shell nanowire array. The ZnO/ZnSe core/shell nanowire forms a type II heterojunci ion that can have an effective bandgap much below that of either component. The nanowire array architecture offers strong enhancement in light absorption through increasing the junction area and light trapping. The device shows a photo-response threshold of similar to 1.6 eV and a large open circuit voltage of 0.7 V. Type II optical transition at the ZnO/ZnSe interface is further confirmed by transmission, photoluminescence and time-resolved photoluminescence. This result opens up new options in selecting the absorber material for a solar cell. (C) 2011 Elsevier B.V. All rights reserved.
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