Related references
Note: Only part of the references are listed.Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures
P. G. Evans et al.
ADVANCED MATERIALS (2012)
Determining the location and cause of unintentional quantum dots in a nanowire
Ted Thorbeck et al.
JOURNAL OF APPLIED PHYSICS (2012)
Comparison of gate geometries for tunable, local barriers in InAs nanowires
Peter Dahl Nissen et al.
JOURNAL OF APPLIED PHYSICS (2012)
Effects of Strain on the Carrier Mobility in Silicon Nanowires
Yann-Michel Niquet et al.
NANO LETTERS (2012)
Coherent singlet-triplet oscillations in a silicon-based double quantum dot
B. M. Maune et al.
NATURE (2012)
A single-atom electron spin qubit in silicon
Jarryd J. Pla et al.
NATURE (2012)
Embracing the quantum limit in silicon computing
John J. L. Morton et al.
NATURE (2011)
Electrical contacts to one- and two-dimensional nanomaterials
Francois Leonard et al.
NATURE NANOTECHNOLOGY (2011)
Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon
L. Dreher et al.
PHYSICAL REVIEW LETTERS (2011)
Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot
M. Xiao et al.
PHYSICAL REVIEW LETTERS (2010)
Electronic properties of quantum dot systems realized in semiconductor nanowires
J. Salfi et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2010)
Spin States of the First Four Holes in a Silicon Nanowire Quantum Dot
Floris A. Zwanenburg et al.
NANO LETTERS (2009)
Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
D. Csontos et al.
PHYSICAL REVIEW B (2009)
Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry
E. P. Nordberg et al.
PHYSICAL REVIEW B (2009)
Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
Binhui Hu et al.
PHYSICAL REVIEW B (2009)
Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability
Neil M. Zimmerman et al.
JOURNAL OF APPLIED PHYSICS (2008)
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Nakul Shaji et al.
NATURE PHYSICS (2008)
Tunable double quantum dots in InAs nanowires
Marc Scheffler et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2008)
Influence of strain on the conduction band structure of strained silicon nanomembranes
C. Euaruksakul et al.
PHYSICAL REVIEW LETTERS (2008)
Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In) As quantum dots
Fredrik Boxberg et al.
REPORTS ON PROGRESS IN PHYSICS (2007)
Gate-defined quantum dots in intrinsic silicon
Susan J. Angus et al.
NANO LETTERS (2007)
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
Y. Sun et al.
JOURNAL OF APPLIED PHYSICS (2007)
Subthreshold channels at the edges of nanoscale triple-gate silicon transistors
H. Sellier et al.
APPLIED PHYSICS LETTERS (2007)
Semiconductor nanowires
Wei Lu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2006)
Phosphorus donors in highly strained silicon
Hans Huebl et al.
PHYSICAL REVIEW LETTERS (2006)
Size-dependent effects on electrical contacts to nanotubes and nanowires
Francois Leonard et al.
PHYSICAL REVIEW LETTERS (2006)
Coherent single charge transport in molecular-scale silicon nanowires
ZH Zhong et al.
NANO LETTERS (2005)
Electrical metrology with single electrons
NM Zimmerman et al.
MEASUREMENT SCIENCE AND TECHNOLOGY (2003)
Fabrication of single-electron transistors and circuits using SOIs
Y Ono et al.
SOLID-STATE ELECTRONICS (2002)
Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation
S Horiguchi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2001)
Share Paper
