Journal
AIP ADVANCES
Volume 5, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4935567
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Funding
- Grants-in-Aid for Scientific Research [15H05732] Funding Source: KAKEN
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Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals. (C) 2015 Author(s).
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