Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 94, Issue 11, Pages 1936-1941Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2010.06.024
Keywords
Energy selective contacts; Photoluminescence; Hot carriers solar cells; Silicon quantum dots; Double resonant tunneling
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Structures consisting of a single layer of silicon quantum dots in silicon dioxide matrix represent a promising approach to implement energy selective contacts for hot carrier solar cells. The opening of the band gap and the resonant tunneling effect allow extraction of carriers within a narrow tunable range of energies. In this work, several silicon quantum dots double barrier structures have been realized using RF-magnetron co-sputtering. Quantum confinement properties of silicon quantum dots and the influence of the annealing process duration on crystallization have been investigated using photoluminescence measurements. (C) 2010 Elsevier B.V. All rights reserved.
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