Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 94, Issue 3, Pages 478-483Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2009.11.010
Keywords
Device modeling; InGaN; Composition grading; Heterojunction
Funding
- National Science Foundation [CBET-0932905]
- Lawrence Berkeley National Laboratory
- Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences
- U.S. Department of Energy [DE-AC02-05CH11231]
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The solar power conversion efficiency of compositionally graded InxGa1-xN solar cells was simulated using a finite element approach. Incorporating a compositionally graded region on the InGaN side of a p-GaN/n-InxGa1-xN heterojunction removes a barrier for hole transport into GaN and increases the cell efficiency. The design also avoids many of the problems found to date in homojunction cells as no p-type high-In content region is required. Simulations predict 28.9% efficiency for a p-GaN/n-InxGa1-xN/n-In0.5Ga0.5N/p-Si/n-Si tandem structure using realistic material parameters. The thickness and doping concentration of the graded region was found to substantially affect the performance of the cells. (C) 2009 Elsevier B.V. All rights reserved.
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