4.7 Article

Tandem solar cells with Cu(In,Ga)S2 top cells on ZnO coated substrates

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 94, Issue 11, Pages 1880-1883

Publisher

ELSEVIER
DOI: 10.1016/j.solmat.2010.06.029

Keywords

Tandem solar cells; Cu(In,Ga)S2; ZnO back contact; Wide gap; Transmission

Funding

  1. New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade and Industry (METI)
  2. Japan Ministry of Education, Culture, Sports, Science and Technology

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We have prepared transparent top cells for stacked tandems with wide gap Cu(In,Ga)S-2 absorbers on ZnO:Al/soda-lime-glass (SLG) and Mo/ZnO:Al/SLG substrates. Their overall transmission increases with the absorber band gap. The band gaps were 1.63, 1.72, and 1.79 eV. We investigated the properties of mechanically stacked tandem solar cells using these top cells and a CuInSe2 bottom cell. The short circuit current density of the tandem cells is typically limited by that of the bottom cell illuminated through the top cells. Our best tandem efficiency was estimated to be 4.4% with an open circuit voltage of 1.08 V. (C) 2010 Elsevier B.V. All rights reserved.

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