Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

Aluminum-doped zinc oxide films were deposited at 100 degrees C on polyethylene terephthalate by radio-frequency magnetron sputtering. The sputtering parameters Such as RF power and Argon working pressure were varied from 25 to 125 W and from 1.1 to 0.2 Pa, respectively. The structural properties of as-deposited films were analysed by X-ray diffraction, showing that all the deposited films were polycrystalline, with hexagonal structure and a strong preferred c-axis orientation (0 0 2). Full width at half maximum and grain sizes were around 0.27 degrees and ranged from 24 to 32 nm, respectively. The strain state of the samples was also estimated from X-ray diffraction Measurements, obtaining compressive stresses from 0.29 to 0.05 GPa. Resistivity as low as 1.1 x 10(-3) Omega cm was achieved for the film deposited at 75 W and 0.2 Pa, sample that showed a low strain state of -0.06 GPa. High optical transmittance (similar to 80%) was exhibited when films were deposited at RF powers below 100 W. Band gap energies ranged from 3.36 to 3.39 eV and a refractive index of 1.80 +/- 0.05, constant in the visible region, was also obtained. (C) 2009 Elsevier B.V. All rights reserved.