Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 93, Issue 6-7, Pages 905-910Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2008.10.020
Keywords
Silicon; Heterojunction; High efficiency; Amorphous silicon
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Our progress in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction solar cell technology and Current understanding of fundamental device physics are presented. In a-Si:H/c-Si cells, device performance is strongly dependent on the quality of the a-Si:H/c-Si heterojunction. Four topics are crucial to minimize recombination at the junction and thereby maximize cell efficiency: wet-chemical pre-treatment of the c-Si surface prior to a-Si:H deposition: optimum a-Si:H doping: thermal and plasma post-treatments of the a-Si:H/c-Si structure. By optimizing these aspects using specifically developed characterization methods, we were able to realize (n)a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si cells with up to 18.5% and 19.8% efficiency, respectively. (C) 2008 Elsevier B.V. All rights reserved.
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