Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 93, Issue 8, Pages 1318-1320Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2009.02.004
Keywords
Thin-film solar cells; Cu(InGa)(SeS)(2) absorber; Sulfurization after selenization method; Sulfurization degree; Delta T(sul-sel) technique
Funding
- New Energy and Industrial Technology Development Organization (NEDO)
Ask authors/readers for more resources
The objective of this study is to find the key factors to improve V(oc). In this study, pentanary Cu(InGa)(SeS)(2) absorbers were prepared by selenization and sulfurization or a sulfurization after selenization (SAS) method. It is found that the sulfurization degree defined as a function of temperature and holding time at the sulfurization step is a key factor to enhance the Ga diffusion and improve V(oc). It is also verified that increase in the temperature difference between selenization and sulfurization enhances the incorporation of S into the selenide absorber. Applying these findings related to Ga and S, V(oc) of 642 mV/cell and efficiency of 14.3% are achieved on a 30 cm x 30 cm-sized soda-lime glass substrate. (C) 2009 Published by Elsevier B.V.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available