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Recent Advances in Synthesis and Applications of 2D Junctions

Journal

SMALL
Volume 14, Issue 38, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201801606

Keywords

2D materials; in-plane heterostructures; integration; vertical heterostructures

Funding

  1. Fundamental Research Funds for the Central Universities (China)
  2. National Key RAMP
  3. D Program of China [2018YFA0306900]

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Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p-n junctions, ohmic contact, high-performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed.

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