4.8 Article

Graphene/Silicon Heterojunction Schottky Diode for Vapors Sensing Using Impedance Spectroscopy

Journal

SMALL
Volume 10, Issue 20, Pages 4193-4199

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201400691

Keywords

heterojunction schottky diode; electrochemical impedance spectroscopy; chemical vapors sensors; graphene

Funding

  1. ICREA Funding Source: Custom

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A graphene(G)/Silicon(Si) heterojunction Schottky diode and a simple method that evaluates its electrical response to different chemical vapors using electrochemical impedance spectroscopy (EIS) are implemented. To study the impedance response of the device of a given vapor, relative impedance change (RIC) as a function of the frequency is evaluated. The minimum value of RIC for different vapors corresponds to different frequency values (18.7, 12.9 and 10.7 KHz for chloroform, phenol, and methanol vapors respectively). The impedance responses to phenol, beside other gases used as model analytes for different vapor concentrations are studied. The equivalent circuit of the device is obtained and simplified, using data fitting from the extracted values of resistances and capacitances. The resistance corresponding to interphase G/Si is used as a parameter to compare the performance of this device upon different phenol concentrations and a high reproducibility with a 4.4% relative standard deviation is obtained. The efficiency of the device fabrication, its selectivity, reproducibility and easy measurement mode using EIS makes the developed system an interesting alternative for gases detection for environmental monitoring and other industrial applications.

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