Journal
SMALL
Volume 9, Issue 8, Pages 1373-1378Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201202978
Keywords
boron nitride; carrier mobility; graphene; hybrid materials; phonon scattering
Categories
Funding
- National Natural Science Foundation of China [51121091, 20973013, 51290272]
- Ministry of Science and Technology of China [2013CB932603, 2012CB933404]
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The carrier transport in boron nitride-embedded graphene (BNG) is studied using density functional theory coupled with the Boltzmann transport equation. Under a phonon scattering mechanism, the intrinsic carrier mobility of BNG at room temperature is tunable from 1.7 x 103 to 1.1 x 105 cm2 V1 s1 when the bandgap is between 0.38 and 1.39 eV. Some specific BNG materials even show ultrahigh mobility up to 6.6 x 106 cm2 V1 s1, and the transport polarity (whether it is electron or hole transport) can be tailored by the application of a uniaxial strain. The wide mobility variation of BNG is attributed to the dependence of the effective mass and the deformation potential constant on the carbon concentration and width. The results indicate that BNG can have both a large onoff ratio and high carrier mobility and is thus a promising material for electronic devices.
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