Journal
SMALL
Volume 6, Issue 14, Pages 1536-1542Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201000328
Keywords
graphene; multilayer stacks; polymer memory; reduced graphene oxide; sheet resistance
Categories
Funding
- 973 project [2009CB930600]
- NNSFC [20704023, 60876010, 60706017, 20774043]
- Chinese Ministry of Education [208050, 707032, NCET-07-0446]
- NSF [07KJB150082, BK2008053, 08KJB510013, 51209003, TJ207035]
- Research Fund for Postgraduate Innovation Project of Jiangsu Province [CX08B_0834]
- STTTP [2009120]
- CRP [NRF-CRP2-2007-01]
- NRF [092 101 0064]
- Centre for Biomimetic Sensor Science at NTU in Singapore
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Highly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 degrees C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet resistance (approximate to 160-500 Omega sq(-1)) and higher conductivity (26 S cm(-1)) as compared to other rGO films obtained by commonly used chemical reduction methods, is fully characterized. The effective reduction can be attributed to the large effective reduction depth in the GO films (1.46 mu m) and the high C1s/O1s ratio (8.04). By using the above approach, rGO films with a tunable thickness and sheet resistance are achieved. The obtained rGO films are used as electrodes in polymer memory devices, in a configuration of rGO/poly(3-hexylthiophene) (P3HT):Phenyl-C61-butyric acid methyl ester (PCBM)/Al, which exhibit an excellent write-once-read-many-times effect and a high ON/OFF current ratio of 10(6).
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