Journal
SMALL
Volume 5, Issue 20, Pages 2291-2296Publisher
WILEY-BLACKWELL
DOI: 10.1002/smll.200900158
Keywords
epitaxy; graphene; monolayers; self-assembly; surface analysis
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Funding
- European Union [NMP4-CT-2004-013817]
- UK Engineering and Physical Science Research Council [EPIC53415811, EPID04876111]
- Engineering and Physical Sciences Research Council [EP/C534158/1] Funding Source: researchfish
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The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron. spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C(2)H(2) or C(2)) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large-scale production of high-quality graphene layers on silicon-based multilayer substrates.
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