Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep15123
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Funding
- Ministry of Science and Technology, Taiwan [MOST 103-2221-E-194 -050 -MY2, MOST 103-2221-E-492-002, MOST 104-2221-E-492-008-MY2]
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In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I-V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approximately 10(4). From temperature-dependent I-V measurements we obtained a SBH of 0.661 eV for a ZnO NW Schottky device in the dark. The photosensitivity of Schottky devices under UV illumination at a power density of 3 mu W/cm(2) was 9186%. Variations in the SBH account for the superior characteristics of n-type Schottky devices under illumination with UV light. The SBH variations were due to the coupled mechanism of adsorption and desorption of O-2 and the increase in the carrier density. Furthermore, through temperature-dependent I-V measurements, we determined the SBHs in the dark and under illumination with UV light at power densities of 0.5, 1, 2, and 3 mu W/cm2 to be 0.661, 0.216, 0.178, 0.125, and 0.068 eV, respectively. These findings should be applicable in the design of highly sensitive nanoscale optoelectronic devices.
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