Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 192, Issue -, Pages 607-627Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2013.11.005
Keywords
Gas sensor; p-Type oxide semiconductor; p-n junction; Selectivity; Sensitivity
Funding
- National Research Foundation of Korea (NRF)
- Korea Government (MEST) [2013R1A2A1A01006545]
- National Research Foundation of Korea [2013R1A2A1A01006545] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High-performance gas sensors prepared using p-type oxide semiconductors such as NiO, CuO, Cr2O3, Co3O4, and Mn3O4 were reviewed. The ionized adsorption of oxygen on p-type oxide semiconductors leads to the formation of hole-accumulation layers (HALs), and conduction occurs mainly along the near-surface HAL. Thus, the chemoresistive variations of undoped p-type oxide semiconductors are lower than those induced at the electron-depletion layers of n-type oxide semiconductors. However, highly sensitive and selective p-type oxide-semiconductor-based gas sensors can be designed either by controlling the carrier concentration through aliovalent doping or by promoting the sensing reaction of a specific gas through doping/loading the sensor material with oxide or noble metal catalysts. The junction between p- and n-type oxide semiconductors fabricated with different contact configurations can provide new strategies for designing gas sensors. p-Type oxide semiconductors with distinctive surface reactivity and oxygen adsorption are also advantageous for enhancing gas selectivity, decreasing the humidity dependence of sensor signals to negligible levels, and improving recovery speed. Accordingly, p-type oxide semiconductors are excellent materials not only for fabricating highly sensitive and selective gas sensors but also valuable additives that provide new functionality in gas sensors, which will enable the development of high-performance gas sensors. (C) 2013 Elsevier B.V. All rights reserved.
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