Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 188, Issue -, Pages 944-948Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2013.07.107
Keywords
Extended gate field-effect-transistors; ZnO:Ta pH sensors; Tantalum doped zinc oxide film; Vapor cooling condensation method
Funding
- National Science Council, Taiwan, Republic of China [NSC-99-2221-E-006-208-MY3]
- Microsystems Technology Center, Industrial Technology Research Institute, Tainan, Taiwan, Republic of China
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To obtain wide linear pH sensing range, the tantalum doped zinc oxide (ZnO:Ta) thin film was deposited as the sensing membrane of extended-gate field-effect-transistor (EGFET) pH sensors using the vapor cooling condensation system. Compared with the ZnO EGFET pH sensors, the experimental results exhibited that the linear sensing pH range of the ZnO:Ta EGFET pH sensors was extended from the pH range of 4-12 to the pH range of 1.3-12. Furthermore, the ZnO:Ta pH sensors was stable in the whole extended pH range and showed favorable sensing sensitivity of 41.56 mV/pH. The AFM images of the ZnO:Ta sensing membrane after the measurement in strong acidic solution showed no observable surface damage, which further verified the high corrosion resistance of the ZnO:Ta sensing membrane. (C) 2013 Elsevier B.V. All rights reserved.
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