Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 161, Issue 1, Pages 1102-1107Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2011.12.033
Keywords
H-2 response; Pd/B:a-C/n-Si structure; Capacitance-frequency characteristics
Funding
- Cultivation Fund of the Key Scientific and Technical Innovation Projects
- Ministry of Education of China [708061]
- Natural Science Foundation of China [10974258]
- Program for New Century Excellent Talents in Universities [NCET-08-0844]
- Natural Science Foundation of Shandong province [ZR2010AL009]
- Fundamental Research Funds for the Central Universities [10CX05001A, 11CX05002A]
- China University of Petroleum [CXZD11-16]
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We prepared Pd/boron doped amorphous carbon film/n-Si (Pd/B:a-C/n-Si) structure using direct current magnetron sputtering method. Capacitance-frequency curves of the as-prepared structure were investigated in air and hydrogen (H-2) at room temperature (RT). It is found that the Pd/B:a-C/n-Si structure exhibits excellent H-2 sensing properties such as high response (similar to 15%) and fast response time (similar to 170s) and recovery time (similar to 325s) for 100 ppm H-2 in air at RT. The influence of n-Si resistivity and deposition temperature was also investigated. The sensing mechanism of the Pd/B:a-C/n-Si structure has also been discussed. (C) 2011 Elsevier B.V. All rights reserved.
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