Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 156, Issue 2, Pages 657-661Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2011.02.013
Keywords
Photo-response; Organic photo sensor; P3HT/PCBM; Organic thin film transistor; Flexible electronics
Funding
- MKE in Korea [2008-F-024-02]
- Ministry of Education, Science and Technology [2009-0083126]
- Korea University
- Samsung Electronics
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001916] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과C6A1602, 2007-0056883] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We have investigated the photo-response characteristics of organic photosensors (OPS) integrated with pentacene based thin film transistors (TFTs). The fabricated device configuration is PEN/ITO/PEDOT:PSS/(poly(3-hexylethiophene)/phenyl-C61-butryic acid methyl ester) (P3HT/PCBM)/Al and PDMS/Au/(poly-4-vinyphenol) (PVP)/pentacene/Au. In order to study the effect of the applied voltage to the pentacene-TFT on the OPS, each device is connected in series. The response current is tuned dependant on the gate-source voltage and the anode-source voltage. The change of the photo induced ON current in the integrated device is measured under light illuminations ranging from 50 mW/cm(2) to 500 mW/cm(2); the corresponding photo-response (Delta I/I-0) of the devices varied from 0.16 to 1.9. We found that the photo-response characteristic is high at the low anode-source voltage and high gate-source voltage. (C) 2011 Elsevier B.V. All rights reserved.
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