Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 146, Issue 1, Pages 40-45Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.02.019
Keywords
Gas sensor; NH3 sensor; Poly-3-hexylthiophene; Organic semiconductor; Organic thin-film transistor
Funding
- MKE/KEIT [2009-F-016-01]
- Development of Eco-Emotional OLED Flat-Panel Lighting
- MKE in Korea [2008-F-024-02]
- National Research Laboratory (NRL) [R0A-2007-000-20111-0]
- Ministry of Education [R32-2008-000-10082-0]
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001916, KI002068] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-0056883] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time. when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas. (C) 2010 Elsevier B.V. All rights reserved.
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