Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 146, Issue 1, Pages 239-244Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.02.045
Keywords
Cupric oxide; Thin film sensor; Hydrogen sensor; Sensing mechanism
Funding
- National Research Laboratory program, Korea
- National Research Foundation of Korea [2007-0056703, 과C6B2012] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Nanostructured CuO thin films are synthesized by deposition and thermal oxidation of Cu on SiO2 substrates. The effects of oxidation temperatures on the morphologies and crystallinity of the CuO thin films are investigated by SEM. XRD, and XPS. The electrical and hydrogen sensing properties of CuO are studied by electrical resistance measurements. In addition, the effects of carrier gases on the gas response of CuO are investigated. The results showed that Cu was oxidized into monoclinic cupric oxide in the investigated temperature range from 300 to 800 degrees C. The p-type semiconducting CuO thin film showed increases in electrical resistance upon exposure to hydrogen. The CuO thin film oxidized at 400 degrees C showed the highest response as compared to others, and it was 3.72 for 6% H-2 at an operating temperature of 250 degrees C. The carrier gases played very important roles in the hydrogen sensing by CuO. That is, the sensor showed good response-and-recovery with a carrier gas of air but not with nitrogen. (c) 2010 Elsevier B.V. All rights reserved.
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