Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 133, Issue 1, Pages 97-104Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2008.02.022
Keywords
sensing membrane; EIS; Pr2O3; PrTiO3; annealed at 800 degrees C; sensitivity; drift rate; hysteresis; interfacial SiO2 and silicate layer
Ask authors/readers for more resources
In this paper, we investigated on the structural properties and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane deposited on Si substrates by reactive rf sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by Xray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. Compared with Pr2O3 sample, electrolyte-insulator-semiconductor devices with a high-k PrTiO3 sensing film annealed at 800 degrees C exhibit good sensing characteristics, including a high sensitivity of 56.8 mV/pH in the solutions from pH 2 to pH 12, a small drift rate of 1.77 mV/h in the pH 7 buffer solution, and a low hysteresis voltage of 2.84 mV in the pH 7 -> 4 -> 7 -> 10 -> 7. The improvement can be explained by the formation of a thinner interfacial SiO2 and silicate layer, and the higher surface roughness. (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available