Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 171, Issue 2, Pages 207-211Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2011.09.011
Keywords
CuO nanowire; Thermal process; Photodetector
Funding
- Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan [D97-2700]
- Advanced Optoelectronic Technology Center, NCKU under Ministry of Education
- Center for Condensed Matter Sciences (CCMS), National Taiwan University
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The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 degrees C in air for 2 h, high density CuO nanowires with an average length of 1.2 mu m and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum. (C) 2011 Elsevier B.V. All rights reserved.
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