Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 147, Issue 1, Pages 115-120Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2008.04.011
Keywords
gamma-radiation; dosimetry; TeO3 film; rf sputtering
Funding
- Department of Science and Technology
- DRDO, Government of India
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Tellurium trioxide (TeO3) and tellurium dioxide (TeO2) thin film has been deposited by rf sputtering. The influence of gamma-radiation closes (in the range 10-50 Gy) on the optical and electrical properties of as-deposited films were studied. Optical band gap values were found to decrease with increasing radiation dose whereas electrical conductivity was increased by about five orders in magnitude. Monotonic decrease in the values of dielectric constant for the deposited TeO3 films with increase in radiation dose was observed. The gamma-ray response behavior of TeO3 and TeO2 thin films are compared, and TeO1 thin film is found to be More Suitable in amorphous Form for gamma-ray detection. (C) 2008 Elsevier B.V. All rights reserved.
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