Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep09680
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Funding
- Natural Science Foundation of China [51031004, 51272078, 51332007, 51431006]
- State Key Program for Basic Researches of China [2015CB921202]
- Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme
- International Science & Technology Cooperation Platform Program of Guangzhou [2014J4500016]
- Program for Changjiang Scholars and Innovative Research Team in University of China [IRT1243]
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Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of similar to 60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch(2)) nonvolatile memories and other oxide nanoelectronic devices.
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