4.6 Review

Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

Journal

SENSORS
Volume 12, Issue 5, Pages 5517-5550

Publisher

MDPI
DOI: 10.3390/s120505517

Keywords

hydrogen gas sensor; semiconductor oxides; nanostructure; thin films; one-dimensional nanostructures

Funding

  1. National Science Foundation of China [90923013, 51173038, 50902046]
  2. Specialized Research Fund for the Doctoral Program of Higher Education [20114208130001]
  3. International Cooperation project of Wuhan City, PR China [201070934340]
  4. Youth Chenguang Project of Science and Technology of Wuhan City, China [201150431133]

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Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors.

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