Journal
SENSORS
Volume 10, Issue 11, Pages 10155-10180Publisher
MDPI
DOI: 10.3390/s101110155
Keywords
lateral phtotvoltaic effect (LPE); metal-semiconductor (MS); metal-oxide-semiconductor (MOS)
Funding
- National Nature Science Foundation [60776035, 10974135, 60378028]
- Foundation of Shanghai Science and Technology Committee [0252nm105, 04DZ14001]
- National Minister of Education Program for Changjiang Scholars and Innovative Research Team in University (PCSIRT)
Ask authors/readers for more resources
The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
