Journal
SENSORS
Volume 10, Issue 7, Pages 6488-6496Publisher
MDPI
DOI: 10.3390/s100706488
Keywords
semiconducting polymer; photodetectors; blocking layers; detectivity
Funding
- DARPA-HARDI Program
- Joint Research Fund for Overseas Chinese Scholars
- National Science Foundation of China [50828301]
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Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 10(13) cm Hz(1/2)/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.
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