Journal
SENSORS
Volume 10, Issue 11, Pages 9847-9856Publisher
MDPI
DOI: 10.3390/s101109847
Keywords
cantilevers; electron beam induced deposition; granular metals; strain sensors
Funding
- NanoNetzwerkHessen (NNH)
- Bundesminiterium fur Bildung und Forschung (BMBF) [0312031C]
- Beilstein-Institut, Frankfurt/Main, Germany
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This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique of focused electron-beam-induced deposition (FEBID) employing the precursor trimethylmethylcyclopentadienyl platinum [MeCpPt(Me)(3)]. We use a cantilever-based deflection technique to determine the sensitivity (gauge factor) of the sensor element. We find that its sensitivity depends on the electrical conductivity and can be continuously tuned, either by the thickness of the deposit or by electron-beam irradiation leading to a distinct maximum in the sensitivity. This maximum finds a theoretical rationale in recent advances in the understanding of electronic charge transport in nano-granular metals.
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