Journal
SENSORS
Volume 8, Issue 9, Pages 5336-5351Publisher
MDPI
DOI: 10.3390/s8095336
Keywords
CMOS; image sensor; fill factor
Funding
- UK Science and Technology Facilities Council (STFC)
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In this paper we present a novel, quadruple well process developed in a modern 0.18 mu m CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 m m pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.
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